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. 2016 Apr 20;16(4):562.
doi: 10.3390/s16040562.

Mass Sensitivity Optimization of a Surface Acoustic Wave Sensor Incorporating a Resonator Configuration

Affiliations

Mass Sensitivity Optimization of a Surface Acoustic Wave Sensor Incorporating a Resonator Configuration

Wenchang Hao et al. Sensors (Basel). .

Abstract

The effect of the sensitive area of the two-port resonator configuration on the mass sensitivity of a Rayleigh surface acoustic wave (R-SAW) sensor was investigated theoretically, and verified in experiments. A theoretical model utilizing a 3-dimensional finite element method (FEM) approach was established to extract the coupling-of-modes (COM) parameters in the absence and presence of mass loading covering the electrode structures. The COM model was used to simulate the frequency response of an R-SAW resonator by a P-matrix cascading technique. Cascading the P-matrixes of unloaded areas with mass loaded areas, the sensitivity for different sensitive areas was obtained by analyzing the frequency shift. The performance of the sensitivity analysis was confirmed by the measured responses from the silicon dioxide (SiO₂) deposited on different sensitive areas of R-SAW resonators. It is shown that the mass sensitivity varies strongly for different sensitive areas, and the optimal sensitive area lies towards the center of the device.

Keywords: Rayleigh surface acoustic wave (R-SAW) resonator; coupling-of-modes (COM); finite element method (FEM); mass sensitivity; sensitive areas.

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Figures

Figure 1
Figure 1
The schematic of a two-port R-SAW resonator with three IDTs.
Figure 2
Figure 2
The schematic of the COM model for typical resonator configuration.
Figure 3
Figure 3
The schematic of the periodic electrodes covering a piezoelectric substrate model.
Figure 4
Figure 4
Meshed periodic structure in Figure 3.
Figure 5
Figure 5
Displacement profiles of periodic shorted-grating on ST-X Quartz: (a) eigenfrequency fsc− = 312.539 (MHz); (b) eigenfrequency fsc+ = 314.528 (MHz).
Figure 6
Figure 6
Input admittance of periodic IDT on ST-X quartz.
Figure 7
Figure 7
Input admittance of periodic IDT on ST-2°X quartz: the red dashed box area shows the counteracted extrema in Figure 6.
Figure 8
Figure 8
The schematic of a layered periodic model with embedded electrodes.
Figure 9
Figure 9
Displacement profiles of periodic layered shorted-grating on ST-X quartz: (a) eigenfrequency f′sc− = 311.666 (MHz); (b) eigenfrequency f′sc+ = 312.466 (MHz).
Figure 10
Figure 10
Input admittance of periodic layered IDT on ST-X quartz.
Figure 11
Figure 11
The schematic of the P-matrix in the IDT section.
Figure 12
Figure 12
The schematic of P-matrix in IDT section.
Figure 13
Figure 13
The schematic of mass deposited along the x-axis from A to F on the two-port SAW resonator.
Figure 14
Figure 14
The frequency responses for non-loaded and different sensitive areas shown in Figure 13 with mass loaded of the resonator.
Figure 15
Figure 15
(a) The structure of the SAW resonator device; (b) the frequency response of the device.
Figure 16
Figure 16
Measured frequency responses caused by (a) area B loaded and (b) area F loaded by SiO2.
Figure 17
Figure 17
The simulated and measured mass sensitivity for different surface areas, each position being demonstrated by repeated measurements.

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