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Wavelet-Based Transistor Parameter Estimation

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Abstract

In this paper a wavelet-based parameter estimation method has been proposed for the common emitter transistor amplifier circuit and compared with the least squares method. As the maximal precision of simulation requires the modeling of electronic circuits in terms of device parameters and circuit components, the Volterra model of the common emitter amplifier circuit derived using the Ebers–Moll model and perturbation technique has been used for parameter estimation. The advantage of the proposed method is a smaller data storage requirement and accurate parameter estimation as compared to the least squares method because the wavelet method is adapted to time-frequency resolution.

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References

  1. I. Daubechies, Ten Lectures on Wavelets (Society for Industrial and Applied Mathematics, Philadelphia, 1992)

    MATH  Google Scholar 

  2. M.W. Frazier, An Introduction to Wavelets Through Linear Algebra (Springer, New York, 1999)

    MATH  Google Scholar 

  3. J. Gao, X. Dong, W.-B. Wang, Y. Li, C. Pan, Instantaneous parameter extraction via wavelet transform. IEEE Trans. Geosci. Remote Sens. 37(2), 867–870 (1999)

    Article  Google Scholar 

  4. P.A. Linden, V.F. Fusco, Concurrent global optimisation for microwave device parameter estimation. IEE Proc. H 140(2), 71–78 (1993)

    Google Scholar 

  5. S. Majumdar, H. Parthasarathy, Perturbation approach to Ebers–Moll modeled transistor amplifier circuit. Circuits Syst. Signal Process. doi:10.1007/s00034-010-9153-0

  6. S. Narayanan, Application of Volterra series to intermodulation distortion analysis of transistor feedback amplifiers. IEEE Trans. Circuit Theory 17(4), 518–527 (1970)

    Article  Google Scholar 

  7. R. Pagano, Characterization, parameter identification, and modeling of a new monolithic emitter switching bipolar transistor. IEEE Trans. Electron Devices 53(5), 1235–1244 (2006)

    Article  Google Scholar 

  8. R.J. Prazenica, R. Lind, A.J. Kurdila, Uncertainty estimation from Volterra kernels for robust flutter analysis. J. Guid. Control Dyn. 26(2), 331–337 (2003)

    Article  Google Scholar 

  9. S. Riccardo, E. Danilo, G. Emilio, Perturbation approach for low frequency noise in junction field effect transistor. Appl. Math. Comput. 74, 2–3 (1996)

    Google Scholar 

  10. L.I. Schiff, Quantum Mechanics, 2nd edn. (McGraw-Hill, New York, 1955)

    MATH  Google Scholar 

  11. D.M.M.-P. Schreurs, J. Verpecht, S. Vandenberghe, E. Vandamme, Straightforward and accurate nonlinear device model parameter estimation method based on vectorial large-signal measurements. IEEE Trans. Microw. Theory Tech. 50(10), 2315–2319 (2002)

    Article  Google Scholar 

  12. B. Toner, V.F. Fusco, Waveform based MOSFET dynamic large-signal parameter estimation. IEE Proc., Microw. Antennas Propag. 150(6), 451–458 (2003)

    Article  Google Scholar 

  13. H.-C. Tseng, J.-H. Chou, An efficient analytic approach for extracting the emitter inductance of collector-Up HBTs. IEEE Trans. Electron Devices 51(7), 1200–1202 (2004)

    Article  Google Scholar 

  14. M. Vadyanathan, M. Iwamoto, L.E. Larson, P.S. Gudem, P.M. Asbeck, The theory of high frequency distortion in bipolar transistors. IEEE Trans. Microw. Theory Tech. 51(2), 448–461 (2003)

    Article  Google Scholar 

  15. V.B. Vats, H. Parthasarathy, Parameter estimation for time varying nonlinear circuit from state analysis and simulation. Commun. Nonlinear Sci. Simul. 13(4), 839–846 (2008)

    Article  MathSciNet  Google Scholar 

  16. J. Vuolevi, T. Rahkonen, Analysis of third order intermodulation distortion in common emitter BJT and HBT amplifiers, IEEE Trans. Circuits Syst. 50(12) (2003)

  17. H. Wang, H.Z. Yang, G.Z. Hu, Combinatorial algorithms for BJT model parameter extraction, in ICSE’ 96 Proc., Penang, Malaysia, 1996

  18. G. Yanxia, M. Yingying, G. Shuibao, W. Daohong, The parameter identification and validation for IGBT based on optimization algorithm, in 2nd International Conference on Power Electronics, Systems and Applications, 2006

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Netaji Subhas Institute of Technology—Dwarka Sector 3, New Delhi, 110075, India

    Sudipta Majumdar & Harish Parthasarathy

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  1. Sudipta Majumdar
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  2. Harish Parthasarathy
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Correspondence to Sudipta Majumdar.

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Majumdar, S., Parthasarathy, H. Wavelet-Based Transistor Parameter Estimation. Circuits Syst Signal Process 29, 953–970 (2010). https://doi.org/10.1007/s00034-010-9181-9

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  • DOI: https://doi.org/10.1007/s00034-010-9181-9

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