(Q35079919)

6 August 2017

title

Continuously tunable electronic structure of transition metal dichalcogenides superlattices (English)

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6 August 2017

1 reference

3

Jian Wang

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6 August 2017

4

Hong Guo

1 reference

6 August 2017

5

Wei Ji

1 reference

6 August 2017

Yong-Hong Zhao

1

1 reference

6 August 2017

Feng Yang

series ordinal

2

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6 August 2017

language of work or name

English

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publication date

13 February 2015

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6 August 2017

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6 August 2017

volume

5

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6 August 2017

page(s)

8356

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Creative Commons Attribution 4.0 International

6 August 2017

copyright license

start time

13 February 2015

1 reference

April 2022 Public Data File from Crossref

copyright status

copyrighted

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cites work

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Role of the dispersion force in modeling the interfacial properties of molecule-metal interfaces: adsorption of thiophene on copper surfaces

8 July 2018

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Epitaxial monolayer MoS2 on mica with novel photoluminescence

8 July 2018

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Van der Waals heterostructures

8 July 2018

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Bandgap engineering of strained monolayer and bilayer MoS2.

8 July 2018

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Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.

8 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

8 July 2018

1 reference

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

8 July 2018

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Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

8 July 2018

1 reference

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Valley-selective circular dichroism of monolayer molybdenum disulphide

8 July 2018

1 reference

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Single-layer MoS2 transistors

8 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

8 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Generalized Gradient Approximation Made Simple

8 July 2018

1 reference

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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

8 July 2018

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Projector augmented-wave method

8 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy

8 July 2018

1 reference

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Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures

27 September 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Strain-induced indirect to direct bandgap transition in multilayer WSe2.

27 September 2018

1 reference

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Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering.

27 September 2018

1 reference

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Strong light-matter interactions in heterostructures of atomically thin films.

27 September 2018

1 reference

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Graphene-like two-dimensional materials.

27 September 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.

27 September 2018

1 reference

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Semiempirical GGA-type density functional constructed with a long-range dispersion correction

27 September 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4326700

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

27 September 2018

1 reference

Effects of strain on band structure and effective masses in MoS2

21 January 2018

1 reference

Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces

21 January 2018

1 reference

From ultrasoft pseudopotentials to the projector augmented-wave method

21 January 2018

1 reference

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

21 January 2018

1 reference

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

21 January 2018

1 reference

Influence of the exchange screening parameter on the performance of screened hybrid functionals

21 January 2018

1 reference

12 December 2020

Designed synthesis, structure, and properties of a family of ferecrystalline compounds [(PbSe)(1.00)](m)(MoSe2)(n)

1 reference

12 December 2020

Efficient implementation of a van der Waals density functional: application to double-wall carbon nanotubes

1 reference

12 December 2020

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

1 reference

12 December 2020

New directions in science and technology: two-dimensional crystals

1 reference

7 January 2021

Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

1 reference

7 January 2021

Electronic properties of the MoS2-WS2heterojunction

1 reference

7 January 2021

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

1 reference

7 January 2021

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

1 reference

7 January 2021

Van der Waals density functionals applied to solids

1 reference

7 January 2021

Identifiers

DOI

10.1038/SREP08356

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6 August 2017

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6 August 2017

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