Wikidata

(Q53206184)

English

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

scientific article published on 22 June 2015

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title
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. (English)
1 reference
stated in
Europe PubMed Central
PubMed publication ID
26083310
retrieved
12 May 2018
reference URL
http://europepmc.org/abstract/MED/26083310

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