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. 2016 May 11;16(5):3005-13.
doi: 10.1021/acs.nanolett.5b05216. Epub 2016 Apr 22.

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman  1 , Ugo Sassi  1 , Boris Desiatov  2 , Noa Mazurski  2 , Silvia Milana  1 , Domenico de Fazio  1 , Anna Eiden  1 , Jacob Khurgin  3 , Joseph Shappir  2 , Uriel Levy  2 , Andrea C Ferrari  1
Affiliations

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman et al. Nano Lett. .

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Keywords: Graphene; avalanche multiplication; photodetectors; silicon photonics.

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Conflict of interest statement

The authors declare no competing financial interest.

Figures

Figure 1
Figure 1
(a) Schematic M–SLG–Si Schottky PD. SOI: silicon-on-insulator. BOX: buried oxide. (b) Finite element (COMSOL Multiphysics) simulated optical intensity profile of a SPP waveguide mode supported by a M–SLG–Si structure.
Figure 2
Figure 2
(a) SEM micrograph of Schottky PD coupled to a Si photonic waveguide. False colors: brown, Si; yellow, Au. (b) Layout of waveguide integrated Schottky PD.
Figure 3
Figure 3
I–V characteristics of a representative M–SLG–Si Schottky PD for various temperatures.
Figure 4
Figure 4
I–V characteristics of (a) graphene-integrated and (b) reference M–Si PDs for different optical powers coupled to the Schottky region. Measured photocurrent in (c) graphene-integrated and (d) reference M–Si PDs as a function of optical power coupled to the Schottky region. The slope of the lines in (c,d) corresponds to Rph.
Figure 5
Figure 5
(a) Rph of M–SLG–Si and reference M–Si PDs as a function of reverse bias for different optical powers coupled to the Schottky region; (b) Rph of M–SLG–Si and reference M–Si PDs for 0 < VR < 3 V. Colored solid lines show a fit of the bias dependent Rph based on combined thermionic-field emission and avalanche multiplication processes.
Figure 6
Figure 6
Fabrication process of Si–SLG Schottky PDs integrated with photonic waveguides. (a) Planar SOI substrate; (b) PECVD deposition and patterning of SiN mask; (c) local oxidation; (d) etching of SiN and SiO2 Al ohmic contact to Si; (e) SLG transfer; (f) formation of Schottky contact and consequent SLG etching.
Figure 7
Figure 7
(a) Raman spectra of (red curve) Si substrate and (black curve) SLG transferred on Si. (b) Raman spectra of (green curve) SLG on Cu, and (blue curve) after normalized, point-to-point subtraction of the Si substrate spectrum (shown in (a), red curve) from the spectrum of SLG transferred on Si (shown in (a), black curve).
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